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| Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.90.1 1.5 0.4 s Features q 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 q q 0.85 (Ta=25C) Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to 2SD1198 2SD1198A 2SD1198 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg emitter voltage 2SD1198A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W C C 200 E B 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package Internal Connection C Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1198 2SD1198A 2SD1198 2SD1198A 2SD1198 2SD1198A (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 Conditions VCB = 25V, IE = 0 VCB = 45V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IB = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = IC = 1A, IB = 1A*2 IC = 1A, IB = 1mA*2 1mA*2 VCB = 10V, IE = -50mA, f = 200MHz min typ 1.250.05 s Absolute Maximum Ratings 0.550.1 0.450.05 max 100 100 100 4.10.2 Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.5 R0.9 R0.9 1.00.1 R 0. 4.50.1 7 Unit nA nA V 30 60 25 50 5 4000 40000 1.8 2.2 150 *2 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h FE VCE(sat) VBE(sat) fT V V MHz Rank classification Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 Pulse measurement Rank hFE 1 Transistor PC -- Ta Collector to emitter saturation voltage VCE(sat) (V) 1.2 100 30 10 3 25C 1 -25C 0.3 0.1 0.03 0.01 0.01 Ta=75C 2SD1198, 2SD1198A VCE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 100 30 10 3 Ta=-25C 1 0.3 0.1 0.03 0.01 0.01 75C 25C VBE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 1.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 003 0.1 0.3 1 3 10 003 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE -- IC 105 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 24 IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Ta=75C 25C 104 -25C 20 16 103 12 8 102 4 10 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2 |
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